Fault Detection and Location of IGBT Short-Circuit Failure in Modular Multilevel Converters

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modular Multilevel Converters: Control and Applications

This review article is mainly oriented to the control and applications of modular multilevel converters (MMC). The main topologies of the switching modules are presented, for normal operation and for the elimination of DC faults. Methods to keep the capacitor voltage balanced are included. The voltage and current modulators, that are the most internal loops of control, are detailed. Voltage con...

متن کامل

Design of an Active Approach for Detection, Estimation and Short-Circuit Stator Fault Tolerant Control in Induction Motors

Three phase induction motors have many applications in industries. Consequently, detecting and estimating the fault and compensate it in a way that the faulty induction motor satisfies the predefined goals are important issues. One of the most common faults in induction motors is the short circuit of the stator winding. In this paper, an active fault-tolerant control system is designed and pres...

متن کامل

A Discussion on IGBT Short-circuit Behavior and Fault Protection Schemes

AbstructIGBT’s are available with short-circuit withstand times approaching those of bipolar transistors. These IGBT’s can therefore be protected by the same relatively slow-acting circuitry. The more efficient IGBT’s, however, have lower shortcircuit withstand times. While protection of these types of IGBT’s is not difficult, it does require a reassessment of the traditional protection methods...

متن کامل

Submodule Temperature Regulation and Balancing in Modular Multilevel Converters

In modular multilevel converters (MMCs), tem5 perature control of semiconductor devices in the submod6 ules (SMs) is a key factor for the safe and reliable opera7 tion. Under normal operation, significant temperature differ8 ences can exist between SMs due to, for example, aging of 9 semiconductor modules and module parameter mismatch. 10 This paper presents a method for achieving SM thermal ba...

متن کامل

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Energies

سال: 2018

ISSN: 1996-1073

DOI: 10.3390/en11061492